
A | New Delhi, Oct 12 (UNI) Prime Minister Narendra Modi will visit Una and Chamba in Himachal Pradesh on Thursday and launch various developmental initiatives in the state.
In Una, Prime Minister will flag off Vande Bharat Express from Una Himachal railway station.
Running from Amb Andaura to New Delhi, it will be the fourth Vande Bharat train to be introduced in the country and is an advanced version compared to the earlier ones, being much lighter and capable of reaching higher speed in shorter duration, the PMO said.
The train accelerates to 100 Km/h in just 52 seconds.
The introduction of the train will help boost tourism in the region and provide a comfortable and faster mode of travel.
Thereafter, in a public function, the Prime Minister will dedicate IIIT Una to the nation and lay the foundation stone of Bulk Drug Park in Una.
The foundation stone of the IIT was laid by the Prime Minister in 2017. Currently more than 530 students are pursuing study in this Institute.
The Prime Minister will lay the foundation stone of Bulk Drug Park at Haroli in Una district, which will be built at a cost of over Rs 1900 crore.
The Park will help reduce dependence on API imports, the PMO said.
It is expected to attract investment of around Rs 10,000 crores and provide employment to more than 20,000 people. It will also give a fillip to economic activities in the region.
The Prime Minister will lay the foundation stone of two hydropower projects - the 48 MW Chanju-III Hydro-electric Project and the 30 MW Deothal Chanju Hydro-electric Project.
Both these projects will generate over 270 million units of electricity annually and Himachal Pradesh is expected to get annual revenue of around Rs. 110 crore from these projects, the PMO said.
The Prime Minister will also launch Pradhan Mantri Gram Sadka Yojana (PMGSY)-III in Himachal Pradesh for upgradation of around 3125 kms of roads in the State.
More than Rs 420 crore has been sanctioned by the Central Government under this phase for the upgradation of 440 kms of roads in 15 border and far flung Blocks of the State.
UNI ASU GNK。 8月25日消息,高盛8月24日发布的《中国半导体国产化进程持续推进》报告指出,中国先进芯片自主化正迎来关键拐点。随着国内晶圆代工厂快速扩产,中国7纳米及以下先进制程晶圆的供需缺口将从2025年的92%大幅收窄至2035年的34%。
届时,中国先进制程晶圆月产能将达到41万片,而国内需求预计为61.9万片。

B | 2025年至2035年间,中国先进制程晶圆供给将以46%的年复合增长率扩张,远高于同期国内需求17%的增速。

C | 报告指出,中国芯片产量自给率在2026年6月已达约70%,较2010年1月的38%提升近一倍。 但高盛也表示,若以产值衡量,自给率缺口仍远高于产量数据所呈现的程度。

D | 中芯国际是此次产能扩张的主力。

E | 高盛模型假设,2026年至2031年间,中芯国际每年将新增3万至5万片先进节点晶圆的月产能,之后至2035年每年再增加2万片。 大规模扩产将带动新一波半导体投资。高盛预测,中国芯片资本支出在2020年代将维持两位数年度增长,2030年达820亿美元,较一年前的预测大幅上调79%。 中国晶圆制造设备市场预计2027年达530亿美元,本土设备供应商市占率将从2025年的26%提高至2028年的38%。 需要指出的是,良率是制约产能有效释放的关键瓶颈。高盛假设中芯国际先进制程良率将从2026年的23%提升至2030年的50%,2035年进一步升至75%。

F | 作为对比,台积电自2018年量产7纳米芯片以来,良率根据芯片设计和尺寸的不同已可超过90%。

G |
Current article:http://teemw.laonenpeidiebenhuaiyunnangshi.cfd/4aij/20260826/4665661.html
Published on:00:00:00
上一篇:行进中国丨德胜,何以“得胜”?